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inchange semiconductor product specification silicon npn power transistors 2SC3182N description ? with to-3p(i) package ? complement to type 2sa1265n applications ? power amplifier applications ? recommend for 70w high fidelity audio frequency amplifier output stage pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 140 v v ceo collector-emitter voltage open base 140 v v ebo emitter-base voltage open collector 5 v i c collector current 10 a i b base current 1 a p t total power dissipation t c =25 ?? 100 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outlin e (to-3p(i)) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC3182N characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ,i b =0 140 v v cesat collector-emitter saturation voltage i c =7a; i b =0.7a 2.0 v v be base-emitter voltage i c =5a ; v ce =5v 1.5 v i cbo collector cut-off current v cb =140v; i e =0 5 | a i ebo emitter cut-off current v eb =5v; i c =0 5 | a h fe-1 dc current gain i c =1a ; v ce =5v 55 160 h fe-2 dc current gain i c =5a ; v ce =5v 35 f t transition frequency i c =1a ; v ce =5v 30 mhz c ob output capacitance i e =0 ; v cb =10v ;f=1mhz 220 pf ? h fe-1 classifications r o 55-110 80-160
inchange semiconductor product specification 3 silicon npn power transistors 2SC3182N package outline fig.2 outline dimensions(unindicated tolerance: ? 0.10 mm)
inchange semiconductor product specification 4 silicon npn power transistors 2SC3182N

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